Freescale Semiconductor Technical Data
Document Number: A2I20H080N Rev. 0, 3/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20H080N wideband integrated circuit is an asymmetrical Doherty
designed with on--chip matching that makes it usable from 1800 to 2200 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typica...
