NXP Semiconductors Technical Data
Document Number: A3T21H360W23S Rev. 0, 08/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 56 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 220...
