A733 Datasheet PDF
Silicon Transistor
- A733 | Elite
- PNP Epitaxial Silicon Transistor
- A733 PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V .
- A733 PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating -60 -50 -5 -150 250 150 -55~+150 Unit V V V mA mW
o o
C C
Electric.
- A733 | SeCoS
- PNP Transistor
- Elektronische Bauelemente
A733
-0.1A , -60V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dis.
- Elektronische Bauelemente
A733
-0.1A , -60V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
CLASSIFICATION OF hFE
Product-Rank A733-R
Range
90~180
A733-Q 135~270
A733-P 200~400
A733-K 300~600
J AD
B K
E CF
1Emitter 2Collector 3Base
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0..
- A733 | Stanson Technology
- PNP TRANSISTOR
- www.DataSheet4U.com
PNP TRANSISTOR -100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICA.
- www.DataSheet4U.com
PNP TRANSISTOR -100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡]
Ta=25¢J¡^
PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Voltage BVebo -5 V Ie=50£g A Collector-Base Leakage Icbo -0.1 uA Vcb=-60V Emitter-Base Leakage Iebo -0.1 uA Veb=-5V Collector-Emitter Saturatio.
- A733 | SeCoS
- PNP Transistor
- Elektronische Bauelemente
A733
-0.1A , -60V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dis.
- Elektronische Bauelemente
A733
-0.1A , -60V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
CLASSIFICATION OF hFE
Product-Rank A733-R
Range
90~180
A733-Q 135~270
A733-P 200~400
A733-K 300~600
J AD
B K
E CF
1Emitter 2Collector 3Base
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0..
- A733 | Tuofeng Semiconductor
- PNP Transistor
- Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors
A733 TRANS.
- Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors
A733 TRANSISTOR(PNP )
TO-92
FEATURE Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Junction and Storage Temperature
Value -60 -50 -5 -100 250 15.
- A733 | Elite
- PNP Epitaxial Silicon Transistor
- A733 PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V .
- A733 PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating -60 -50 -5 -150 250 150 -55~+150 Unit V V V mA mW
o o
C C
Electric.
- A733 | Stanson Technology
- PNP TRANSISTOR
- www.DataSheet4U.com
PNP TRANSISTOR -100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICA.
- www.DataSheet4U.com
PNP TRANSISTOR -100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡]
Ta=25¢J¡^
PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Voltage BVebo -5 V Ie=50£g A Collector-Base Leakage Icbo -0.1 uA Vcb=-60V Emitter-Base Leakage Iebo -0.1 uA Veb=-5V Collector-Emitter Saturatio.
- A7336 | AiT Semiconductor
- 600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO
- AiT Semiconductor Inc.
www.ait-ic.com
A7336
600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO POWER MAN.
- AiT Semiconductor Inc.
www.ait-ic.com
A7336
600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO POWER MANAGEMENT UNIT (PMU)
DESCRIPTION
The A7336 is a complex power management, which can provide two roads of low-noise high-speed LDOs and high efficiency reached 95% of the DC-DC buck. As the use of CMOS process realization of the work of the chip consumes very little current, the internal use of low-resistance, makes the LDO's output current of up to .
