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ADM23N06E

ADV
Part Number ADM23N06E
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM23N06E  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 6...
Datasheet PDF File ADM23N06E PDF File

ADM23N06E
ADM23N06E

Overview
                        ADV     ADM23N06E  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 23A RDS(ON) (mΩ) 42mΩ TO252 2 1  2  3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C Ratings 60 ±20 150 -55 to 150 23 80 23 18 ...


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