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AFGB30T65SQDN

ON Semiconductor

IGBT


Description
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features Maximum Junction Temperature: TJ = 175°C High Speed Switching Series VCE(sat) = 1.6 V (typ.) @ IC = 30 A Low VF Soft Recovery Co−packaged Diode AEC−Q101 Qualified 100% of the Parts are Dynamically Tested (Note 1) Typical Applications Automotive On Board Charger Autom...



ON Semiconductor

AFGB30T65SQDN

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