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AFGHL40T65SQ IGBT Datasheet PDFIGBT IGBT |
　
　
　
| Part Number | AFGHL40T65SQ |
|---|---|
| Description | IGBT |
| Feature | Field Stop Trench IGBT
40 A, 650 V
AFGHL40T65SQ
Using the novel field stop 4th generation high speed IGBT technol ogy. AFGHL40T65SQ which is AEC Q101 qua lified offers the optimum performance f or both hard and soft switching topolog y in automotive application. It is a st and−alone IGBT. Features • AEC−Q 101 Qualified • Maximum Junction Temp erature: TJ = 175°C • Positive Tempe rature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1. 6 V (Typ. ) @ IC = 40 A • 100% of th e Parts are Tested for ILM (Note 2) • Fast Switching • Tight Parameter Dis tr . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | AFGHL40T65SQD |
|---|---|
| Description | IGBT |
| Feature | Field Stop Trench IGBT
40 A, 650 V
AFGHL40T65SQD
Using the novel field sto p 4th generation high speed IGBT techno logy. AFGHL40T65SQD which is AEC Q101 q ualified offers the optimum performance for both hard and soft switching topol ogy in automotive application. Feature s • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • P ositive Temperature Co−efficient for Easy Parallel Operating • High Curren t Capability • Low Saturation Voltage : VCE(Sat) = 1. 6 V (Typ. ) @ IC = 40 A â €¢ 100% of the Parts are Tested for ILM (Note 2) • Fast Switching • Tight Parameter Distribution • RoHS Complia nt . |
| Manufacture | ON Semiconductor |
| Datasheet |
 |
　
　
　
　
　
　
| Part Number | AFGHL40T65SQ |
|---|---|
| Description | IGBT |
| Feature | Field Stop Trench IGBT
40 A, 650 V
AFGHL40T65SQ
Using the novel field stop 4th generation high speed IGBT technol ogy. AFGHL40T65SQ which is AEC Q101 qua lified offers the optimum performance f or both hard and soft switching topolog y in automotive application. It is a st and−alone IGBT. Features • AEC−Q 101 Qualified • Maximum Junction Temp erature: TJ = 175°C • Positive Tempe rature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1. 6 V (Typ. ) @ IC = 40 A • 100% of th e Parts are Tested for ILM (Note 2) • Fast Switching • Tight Parameter Dis tr . |
| Manufacture | ON Semiconductor |
| Datasheet |
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