Part Number | AP2312GN |
Manufacturer | Advanced Power Electronics |
Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Description | SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and c... |
Features |
al Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200920041
AP2312GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
... |
Published | May 3, 2007 |
Datasheet | AP2312GN PDF File |