APM3011N
N-Channel Enhancement Mode MOSFET
Features
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Pin Description
30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-220, TO-252 and TO-263 Packages
Applications
Power Management in Desktop Computer or DC/DC Converters Systems.
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