MOSFET. APT11F80B Datasheet

APT11F80B Datasheet PDF

Part APT11F80B
Description N-Channel MOSFET
Feature APT11F80B; APT11F80B APT11F80S 600V, 12A, 0.9Ω Max trr ≤210ns N-Channel FREDFET POWER MOS 8® is a high speed,.
Manufacture Microsemi
Datasheet
Download APT11F80B Datasheet




APT11F80B
APT11F80B
APT11F80S
600V, 12A, 0.9Ω Max trr 210ns
N-Channel FREDFET
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
TO-247
D3PAK
APT11F80B
APT11F80S
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
RθCS
TJ,TSTG
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
12
8
46
±30
524
6
Unit
A
V
mJ
A
Min Typ Max Unit
337 W
0.37
°C/W
0.15
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m



APT11F80B
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 6A
VGS = VDS, ID = 1mA
800
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 533V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT11F80B_S
Typ Max Unit
V
0.87 V/°C
0.65 0.9
Ω
45V
-10 mV/°C
250
1000
μA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specied
Test Conditions
Min
VDS = 50V, ID = 6A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 6A,
VDS = 400V
Resistive Switching
VDD = 400V, ID = 6A
RG = 4.7Ω 6 , VGG = 15V
Typ
11
2471
42
246
116
58
80
13
41
14
20
61
18
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
G
ISD = 6A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 6A 3
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 6A, di/dt 1000A/μs, VDD = 400V,
TJ = 125°C
D
S
12
A
46
1.0
181 210
300 360
0.71
1.61
8.3
11.9
V
ns
μC
A
25 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 29.1mH, RG = 25Ω, IAS = 6A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.



APT11F80B
30
VGS = 10V
25
20
TJ = -55°C
TJ = 25°C
15
10
TJ = 125°C
5
TJ = 150°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 6A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
18
16
TJ = -55°C
14
TJ = 25°C
12
TJ = 125°C
10
8
6
4
2
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 6A
14
12
12
VDS = 160V
10
VDS = 400V
8
6
VDS = 640V
4
2
0
0 20 40 60 80 100 120
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
16
TJ = 125°C
14
12
10
APT11F80B_S
VGS= 10, & 15V
VGS= 6, & 6.5V
5.5V
8
6 5V
4
2 4.5V
4V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
45
VDS> ID(ON) x RDS(ON) MAX.
40 250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
25
20 TJ = -55°C
15
10 TJ = 25°C
5
0
0
4,000
TJ = 125°C
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
1,000
Ciss
100
Coss
10 Crss
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
45
40
35
30
25
TJ = 25°C
20
15 TJ = 150°C
10
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)