Part Number | APT40GP90JDQ2 |
Manufacturer | Advanced Power Technology |
Title | POWER MOS 7 IGBT |
Description | TYPICAL PERFORMANCE CURVES ® APT40GP90JDQ2 900V APT40GP90JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high v... |
Features |
ure Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX U... |
Published | Aug 16, 2008 |
Datasheet | APT40GP90JDQ2 PDF File |