Features
Fast Read Access Time – 120 ns Fast Byte Write – 200 µs Self-timed Byte Write Cycle
– Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endur...
