1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM
Description
Features
Single 3.3V ± 10% Supply Fast Read Access Time – 200 ns Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-Byte Page Write Operation Low Power Dissipation – 15 mA Active Current – 20 µA CMOS Standby Current Hard...
