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ETC
ETC
B1016 2SB1016
2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (
B1016 pdf
Toshiba
Toshiba
B1016A 2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc
B1016A pdf




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