2SB1253
Description
Power Transistors
2SB1253
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1893
Unit: mm
12.5 3.5 15.0±0.2 0.7
s Features
q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed t...
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