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B1560

Sanken electric

Silicon PNP Epitaxial Planar Transistor

Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390...



B1560

Sanken electric


Octopart Stock #: O-791312

Findchips Stock #: 791312-F

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Description
Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit VC
More View BO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ 20.0min 4.0max 19.9±0.3 4.0 2.0 1.8 5.0±0.2 15.6±0.4 9.6 4.8±0.2 2.0±0.1 a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –10mA I C– V CE Characteristics (Typical) –10 –2 .5 mA –2 . 0 m A –1.5mA –8 –1.2mA –1.0mA –6 –0.8mA –0.6mA –4 IB=–0.4mA –2 0 0 –2 –4 –6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V BE Temperature Characteristics (Typical) (VCE=–4V) –10 Collector Current IC(A) 125˚C (Case Temp) –2350˚˚CC((CCaasseeTTeemmp)p) –8 –2 –6 –10A –7A IC=–5A –4 –1 –2 0 –0.2 –0.5 –1 –5 –10 Base Current IB(mA) –50 –100 –200 0 0 –1 –2 –2.5 Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE h FE– I C Characteristics (Typical) 40,000 (VCE=–4V) 10,000 5,000 Typ h FE– I C Temperature Characteristics (Typical) 50000 (VCE=–4V) 125˚C 10000 5000 25˚C –30˚C θ j-a– t Characteristics 3 1 0.5 1,000 –0.2 –0.5 –1 Collector Current IC(A) –5 1000 500 –10 –0.2 –0.5 –1 Collector Current IC(A) –5 0.1 –10 1 5 10 50 100 Time t(ms) 500 1000 2000 f T– I E Characteristics (Typical) (VCE=–12V) 100 80 Cut-off Frequency fT(MHZ) 60 Typ 40 20 0 0.02 0.05 0.1 0.5 1 Emitter Current IE(A) 48 5 10 Collector Current IC(A) Safe Operating Area (Single Pulse) –30 –10 100 1 ms 0ms –5 DC –1 –0.5 –0.1 Without Heatsink Natural Cooling –0.05 –3 –5 –10 –50 –100 –200 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 100 With Infinite heatsink 50 Without Heatsink 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150






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