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BB503C

Part Number	BB503C
Manufacturer	Hitachi
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Published	Jun 3, 2005
Detailed Description	BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features • • • • Bui...
Datasheet	BB503C PDF File

Overview

BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812B(Z) 3rd.
Edition Jul.
1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.
8 dB typ.
at f = 900 MHz High gain; PG = 22 dB typ.
at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
2.
Marking is “CS–”.
BB503C is individual type number of HITACHI BBFET.
BB503C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain...

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