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BCP5616Q

Diodes

NPN Transistor


Description
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  Complementary PNP Type: BCP5316Q  Totally Lead-Free & Fully Ro...



Diodes

BCP5616Q

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