Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Features
BVCEO > 80V Ic = 1A High Continuous Collector Current ICM = 2.0A Peak Pulse Current Low Saturation Voltage VCE(sat) < 500mV @ 0.5A Epitaxial Planar Die Construction Complementary PNP types: BCX5316Q Totally Lead...
