SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES . Designed for Complementary Use with BD136, BD138
and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
BD135 BD137 BD139
Collector-Emitter Voltage
BD135 BD137 BD139
Emitter-Base Voltage
Collector Cur...
