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BD179

INCHANGE
Part Number BD179
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistor BD179 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter ...
Datasheet PDF File BD179 PDF File

BD179
BD179

Overview
isc Silicon NPN Power Transistor BD179 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 30 W 150 ℃ Tstg Storage ...


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