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BD239B

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C ·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mediu...

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