| Part Number | BD645 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Ty... |
| Features |
70
℃/W
BD645
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD645
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(... |
| File Size | 188.75KB |
| Datasheet |
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