isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 80V(Min) ·Complement to type BD722 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output and general purpose
amplifier applications.
ABSOLUTE MAXIM...
