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BDW36
Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining
Voltage
- : VCEO(SUS)= 180V(Min) ·High Switching Speed ·Low Collector Saturation
Voltage
- : VCE(sat)= 1.0V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in industrial-military power amplifier and swit...
Inchange Semiconductor
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