isc
Silicon NPN
Power Transistor
BDY26
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High
Switching Speed ·Minimum Lot-to-Lot variations for robust de...