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BFP640FESD

Infineon

Robust Low Noise Silicon Germanium Bipolar RF Transistor

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BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarante...


Infineon

BFP640FESD

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