DatasheetsPDF.com

BL1N60F

GME
Part Number BL1N60F
Manufacturer GME
Title N-Channel Power MOSFET
Description Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =9....
Features  RDS(ON) =9.3Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 5.0nC) Lead-free  Low reverse transfer capacitance (...
Published May 18, 2018
Datasheet PDF File BL1N60F PDF File


BL1N60F
BL1N60F


Features

 RDS(ON) =9.3Ω@VGS = 10V. Pb
 Ultra Low gate charge (typical 5.0nC) Lead-free
 Low reverse transfer capacitance (CRSS = typical 3.0 pF)
 Fast switching capability
 Avalanche energy specified
 Improved dv/dt capability, high ruggedness B...



Similar Datasheet


INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)