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BL3N60
N-Channel Power Mosfet
Description
3A,600V N-Channel Power
Mosfet
FEATURES VDS = 600V , ID = 3A RDS(ON) =3.6Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC ) Pb Lead-free Ultra low gate charge ( typical 10 nC ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless...
GME
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