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BL9N20

GME

N-Channel Power Mosfet


Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 FEATURES  TrenchFET Power MOSFETS.  175℃ Junction Temperature.  New Low Thermal Resistance Package. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage 200 VGS Gate -S...



GME

BL9N20

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