DatasheetsPDF.com

BLC9G22LS-120VT

Part Number	BLC9G22LS-120VT
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC9G22LS-120VT Power LDMOS transistor Rev. 1 — 14 July 2017 Product data sheet 1. Product profile 1.1 General descri...
Datasheet	BLC9G22LS-120VT PDF File

Overview

BLC9G22LS-120VT Power LDMOS transistor Rev.
1 — 14 July 2017 Product data sheet 1.
Product profile 1.
1 General description 120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2180 700 28 30 18.
1 31 32.
5 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
2 Features and benefits  Excellent ruggedn...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)