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BLF277

NXP
Part Number BLF277
Manufacturer NXP
Description VHF power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product specification September 1992 Philips Semico...
Datasheet PDF File BLF277 PDF File

BLF277
BLF277


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
Fig.
1 Simplified outline and symbol.
A marking code, showing gate-source voltage (VGS) i...



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