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BLF6G20-180RN Transistor Datasheet PDF

Power LDMOS Transistor

Power LDMOS Transistor

 

 

 

Part Number BLF6G20-180RN
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G20-180RN; BLF6 G20LS-180RN Power LDMOS transistor Rev.
01 — 17 November 2008 Product data s heet 1.
Product profile 1.
1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit.
Mode of opera tion 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17.
2 ηD (%) 27 IMD3 (dBc) −38 [1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability o .
Manufacture NXP
Datasheet
Download BLF6G20-180RN Datasheet

BLF6G20-180RN

 

 

 


 

 

 

Part Number BLF6G20-180RN
Description Power LDMOS transistor
Feature BLF6G20-180RN; BLF6G20LS-180RN Power LDM OS transistor Rev.
2 — 1 September 20 15 Product data sheet 1.
Product prof ile 1.
1 General description 180 W LDMO S power transistor for base station app lications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performa nce Typical RF performance at Tcase = 25 C in a class-AB production test c ircuit.
Mode of operation f VDS PL(A V) Gp D IMD3 (MHz) (V) (W) (dB) (% ) (dBc) 2-carrier WCDMA 1930 to 1990 30 40 17.
2 27 38[1] ACPR (dBc) 41[1] [1] Test signal: 3GPP; test mod el 1; 64 DPCH; PAR = 7 dB at 0.
01 % pro bability on CCDF per car .
Manufacture Ampleon
Datasheet
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BLF6G20-180RN

 

 

 

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