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BRG10N120D
Insulated-Gate Bipolar Transistor
Description
BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features ，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation
voltage
. / Applications 。 Eddy-current heating. / Equivalent Circuit / Pinning 1 2 3 PIN1...
BLUE ROCKET ELECTRONICS
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