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BSB013NE2LXI
n-Channel Power MOSFET
Description
BSB013NE2LXI OptiMOSTM Power-
MOSFET
Features Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (<0.7 mm) 100% avalanche tested 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 1.3 163 39 62 Double-sided cooling Compatible with DirectFET® package MX footprint and...
Infineon
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