BSC118N10NS G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
100 V 11.8 mΩ 71 A
150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
PG-TDSON-8
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