Planar Transistor. BTN1101E3 Datasheet

BTN1101E3 Datasheet PDF


Part Number

BTN1101E3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 4 Pages
Datasheet
Download BTN1101E3 Datasheet



BTN1101E3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN1101E3
Spec. No. : C606E3-A
Issued Date : 2005.01.03
Revised Date :2008.01.30
Page No. : 1/4
Features
Low VCE(sat)
High BVCEO
Excellent current gain characteristics
RoHS compliant package
Symbol
BTN1101E3
Outline
TO-220AB
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw380μs,Duty2%.
BTN1101E3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
80
80
6
10
20 (Note 1)
2
50
62.5
2.5
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTN1101E3
CYStech Electronics Corp.
Spec. No. : C606E3-A
Issued Date : 2005.01.03
Revised Date :2008.01.30
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
80
-
-
-
-
120
100
-
-
Typ.
-
-
-
0.3
1.0
-
-
50
130
Max.
-
10
50
0.6
1.5
-
-
-
-
Unit
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=30mA, IB=0
VCE=80V, VBE=0
VEB=5V, IC=0
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTN1101E3
CYStek Product Specification




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