Planar Transistor. BTP5401A3 Datasheet

BTP5401A3 Datasheet PDF


Part Number

BTP5401A3

Description

General Purpose PNP Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 4 Pages
Datasheet
Download BTP5401A3 Datasheet


BTP5401A3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP5401A3
Description
The BTP5401A3 is designed for general purpose amplification.
Large IC , IC( Max) = -0.6A
High BVCEO, BVCEO= -150V
Complementary to BTN5551A3.
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
Symbol
BTP5401A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
EBC
Limits
-160
-150
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401A3
CYStek Product Specification

BTP5401A3
CYStech Electronics Corp.
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
hFE 1
hFE 2
hFE 3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
56
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Classification Of hFE 2
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
390
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank
Range
K
56~120
P
82~180
Q
120~270
R
180~390
BTP5401A3
CYStek Product Specification





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