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BU522A

Inchange Semiconductor

Silicon Darlington NPN Power Transistor


Description
isc Silicon Darlington NPN Power Transistor BU522A DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collec...



Inchange Semiconductor

BU522A

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