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BU606

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXI...

Inchange Semiconductor

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