isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25℃)
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