isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83
·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA...