DIODE. BYT08P-1000 Datasheet

BYT08P-1000 Datasheet PDF

Part BYT08P-1000
Description FAST RECOVERY RECTIFIER DIODE
Feature ® BYT 08P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE.
Manufacture STMicroelectronics
Datasheet
Download BYT08P-1000 Datasheet

® BYT 08P-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REV BYT08P-1000 Datasheet
Ultra fast Rectifier FEATURES ·With TO-220 packaging ·Metal BYT08P-1000 Datasheet




BYT08P-1000
® BYT 08P-1000
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSES RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
Cathode connected to case
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
VRSM
IFRM
IF (RMS)
IF (AV)
Parameter
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
RMS Forward Current
Average Forward Current
IFSM Surge Non Repetitive Forward Current
P Power Dissipation
Tstg Storage and Junction Temperature Range
Tj
tp 10µs
Tc = 115°C
δ = 0.5
tp = 10ms
Sinusoidal
Tc = 115°C
THERMAL RESISTANCE
Symbol
Rth (j - c)
Junction-case
Parameter
TO220AC
(Plastic)
A
K
Value
1000
1000
100
16
8
50
17
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
A
W
°C
Value
2
Unit
°C/W
October 1999 - Ed: 2A
1/4



BYT08P-1000
BYT 08P-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
IR
VF
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
Test Conditions
VR = VRRM
IF = 8A
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
Test Conditions
IF = 1A
IF = 0.5A
diF/dt = - 15A/µs
IR = 1A
VR = 30V
Irr = 0.25A
Min.
Typ.
Max.
35
2
1.9
1.8
Unit
µA
mA
V
Min.
Typ.
Max.
155
65
Unit
ns
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min. Typ. Max.
tIRM diF/dt = - 32A/µs
diF/dt = - 64A/µs
IRM diF/dt = - 32A/µs
diF/dt = - 64A/µs
VCC = 200 V IF = 8A
Lp 0.05µH Tj = 100°C
See Figure 1
200
120
5.5
6
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C = VRP
VCC
Tj = 100°C
diF/dt = - 8A/µs
Test Conditions
VCC = 200V
Lp = 12µH
IF = IF (AV)
See figure 2
Min.
Typ.
Max.
4.5
To evaluate the conduction losses use the following equations:
VF = 1.47 + 0.041 IF
P = 1.47 x IF(AV) + 0.041 IF2(RMS)
Unit
ns
A
Unit
2/4




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)