Mesa Rectifiers. BYT52D Datasheet

BYT52D Datasheet PDF


Part Number

BYT52D

Description

Fast Silicon Mesa Rectifiers

Manufacture

Vishay Telefunken

Total Page 4 Pages
Datasheet
Download BYT52D Datasheet



BYT52D
Fast Silicon Mesa Rectifiers
Features
D Glass passivated junction
D Hermetically sealed package
D Low reverse current
D Soft recovery characteristics
BYT52.
Vishay Telefunken
Applications
Fast rectifiers and switches
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Average forward current
Junction and storage
temperature range
tp=10ms,
half sinewave
on PC board
l=10mm, TL=25°C
Type
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
50
100
200
400
600
800
1000
50
IFAV
IFAV
Tj=Tstg
0.85
1.4
–65...+175
Unit
V
V
V
V
V
V
V
A
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Reverse recovery time
IF=1A
VR=VRRM
VR=VRRM, Tj=150°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol Min Typ Max Unit
VF 1.3 V
IR 5 mA
IR 150 mA
trr 200 ns
Document Number 86029
Rev. 2, 24-Jun-98
www.vishay.de FaxBack +1-408-970-5600
1 (4)

BYT52D
BYT52.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120 1000
100
80
60
ll
40
20
0 TL=constant
0 5 10 15 20 25 30
94 9552
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
100
Scattering Limit
10
1
VR = VR RM
0.1
0 40
80 120 160 200
94 9448
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
1.2
VR = VR RM
v1.0 f 1kHz
vRthJA 100K/W
PC Board
0.8
10
Tj = 25°C
1
Scattering Limit
0.6
0.4 0.1
0.2
0
0 40 80 120 160 200
94 9447
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
2.0
vVR = VR RM
1.6
f 1kHz
RthJA=45K/W
l=10mm
1.2
0.8
0.01
0 0.6 1.2 1.8 2.4 3.0
94 9449
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
20
Tj = 25°C
16
12
8
0.4 4
0
0 40 80 120 160 200
94 9446
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0
0.1 1
10 100
94 9451
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 86029
Rev. 2, 24-Jun-98




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