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C1050 Transistor Datasheet PDF

Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor

 

 

 

Part Number C1050
Description Silicon Epitaxial Planar Transistor
Feature 2SC1050 GENERAL DESCRIPTION Silicon Epi taxial Planar Transistor Silicon NPN h igh frequency, high power transistors i n a plastic envelope, primarily for use in audio and general purpose TO-3 www.
DataSheet4U.
com QUICK REFERENCE DATA S YMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltag e peak value Collector-emitter voltage (open base) Collector current (DC) Coll ector current peak value Total power di ssipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V TYP Tmb 25 IC = 0.
5A; IB = 0.
1A IF = 0.
5A 1.
5 MAX 30 0 250 1 40 1.
2 .
Manufacture Wing Shing Electronic
Datasheet
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C1050

 

 

 


 

 

 

Part Number C1050
Description NPN Transistor
Feature .
Manufacture Sanyo
Datasheet
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C1050

 

 

 


 

 

 

Part Number C1050
Description Silicon NPN Power Transistors
Feature Product Specification Silicon NPN Power Transistors www.
jmnic.
com 2SC1050 DES CRIPTION With TO-3 package High breakdo wn voltage APPLICATIONS For use in audi o and general purpose applications PINN ING (See Fig.
2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.
1 simplified outline (TO-3) and symbol Absolute ma ximum ratings(Ta=25 ) SYMBOL PARAMETE R VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitte r-base voltage IC Collector current P T Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Tmb= .
Manufacture SavantIC
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