2SC2167. C2167 Datasheet

C2167 Datasheet PDF


Part C2167
Description 2SC2167
Feature SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 p.
Manufacture SavantIC
Datasheet
Download C2167 Datasheet


SavantIC Semiconductor Silicon NPN Power Transistors www.Dat C2167 Datasheet




C2167
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=150V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2167
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
Collector current
Collector current-peak
Collector power dissipation TC=25
Junction temperature
Storage temperature
VALUE
150
150
6
2
3
30
150
-55~150
UNIT
V
V
V
A
A
W



C2167
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2167
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
150 V
V(BR)CBO Collector-base breakdown voltage
IC=0.5mA ;IE=0
150
V
V(BR)EBO Emitter-base breakdown voltage
IE=0.5mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A
1.0 V
ICBO Collector cut-off current
VCB=150V;IE=0
10 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
10 µA
hFE DC current gain
IC=0.1A ; VCE=5V
50
fT Transition frequency
IC=0.1A ; VCE=10V
20 MHz
2






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