C3205 Datasheet
Elektronische Bauelemente
KTC3205
NPN Silicon General Purpose Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current
CLASSIFICATION OF hFE
Product-Rank
KTC3205-O
Range
100~200
KTC3205-Y 160~320
TO-92L
GH
J AD
1Emitter 2Collector 3Base
B K
E CF
REF.
A B C D E F G H J K
Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45
1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
30 30 5 2 1 150, -55~150
1
Emitter
Unit V V V A W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Un.
Part Number |
C3205 |
Manufacturers |
Kexin |
Logo |
|
Description |
Epitaxial Planar NPN Transistor |
Datasheet |
C3205 Datasheet (PDF) |
SMD Type
Transistors
Epitaxial Planar NPN Transistor KTC3205
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A
SOT-89
4.50±0.1 1.80±0.1
123
0.48±0.1
0.53±0.1
2.50±0.1 4.00±0.1
Unit:mm 1.50 ±0.1
0.44±0.1
0.80±0.1 2.60±0.1
0.40±0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-Emitter voltage Emitter-base voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PC Tj Tstg
3.00±0.1
1.Base 2.Collector 3.Emitter
Rating 30 30 5 2 500 150
-55 to 150
Unit V V V A
mW ℃ ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector-base breakdown voltage Coll.
BIPOLAR TRANSISTOR (NPN)
FEATURES Complementary to KTA1273 High Current Application Surface Mount device
MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.055 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC TJ TSTG
KTC3205
SOT-89
Value 30 30 5 2 500 150
-55 ~+150
Unit V V V A mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.
NPN Transistor
Elektronische Bauelemente
KTC3205
NPN Silicon General Purpose Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current
CLASSIFICATION OF hFE
Product-Rank
KTC3205-O
Range
100~200
KTC3205-Y 160~320
TO-92L
GH
J AD
1Emitter 2Collector 3Base
B K
E CF
REF.
A B C D E F G H J K
Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45
1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
30 30 5 2 1 150, -55~150
1
Emitter
Unit V V V A W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut - Off Current Emitter cut-off current DC Current Gain Collector to Emitter Saturation Voltage Base – Emitter Voltage Transition Frequency Collector Output Capacitance
V(BR)CBO
30
-
- V IC=1mA, IE=0
V(BR)CEO
30
-
- V IC=10mA, IB=0
V(BR)EBO
5
-
- V IE=1mA, IC=0
ICBO - - 0.1 µA VCB=30V, IE=0
IEBO - - 0.1 µA VEB=5V, IC=0
hFE 100 - 320
VCE=2V,.
2019-09-26 : TPS3831 TPS3839 TPS3824 TPS3836J25-EP TPS3838E18-EP TPS3838J25-EP TPS3837K33-EP TPS3837L30-EP TPS3837E18-EP TPS3837J25-EP