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C3355 2SC3355 Datasheet PDF2SC3355 2SC3355 |
| Part Number | C3355 |
|---|---|
| Description | 2SC3355 |
| Feature | www. DataSheet4U. com DATA SHEET SHEET DA TA SILICON TRANSISTOR 2SC3355 HIGH FR EQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial tra nsistor designed for low noise amplifie r at VHF, UHF and CATV band. It has lan ge dynamic range and good current chara cteristic. PACKAGE DIMENSIONS in millim eters (inches) 5. 2 MAX. (0. 204 MAX. ) F EATURES • Low Noise and High Gain NF = 1. 1 dB TYP. , Ga = 8. 0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1. 0 GHz NF = 1. 1 d B TYP. , Ga = 9. 0 dB TYP. @VCE = 10 V, I C = 40 mA, f = 1. 0 GHz • High Power G ain MAG = 11 dB TY . |
| Manufacture | NEC |
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| Part Number | C3355 |
|---|---|
| Description | 2SC3355 |
| Feature | www. DataSheet4U. com DATA SHEET SHEET DA TA SILICON TRANSISTOR 2SC3355 HIGH FR EQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial tra nsistor designed for low noise amplifie r at VHF, UHF and CATV band. It has lan ge dynamic range and good current chara cteristic. PACKAGE DIMENSIONS in millim eters (inches) 5. 2 MAX. (0. 204 MAX. ) F EATURES • Low Noise and High Gain NF = 1. 1 dB TYP. , Ga = 8. 0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1. 0 GHz NF = 1. 1 d B TYP. , Ga = 9. 0 dB TYP. @VCE = 10 V, I C = 40 mA, f = 1. 0 GHz • High Power G ain MAG = 11 dB TY . |
| Manufacture | NEC |
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