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C3671

Toshiba

2SC3671


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) Hig...



Toshiba

C3671

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