Schottky Diode. C3D03065E Datasheet

C3D03065E Datasheet PDF


Part Number

C3D03065E

Description

Silicon Carbide Schottky Diode

Manufacture

CREE

Total Page 6 Pages
Datasheet
Download C3D03065E Datasheet



C3D03065E
C3D03065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM =
IF (TC=135˚C) =
Qc =
650 V
5A
7.6 nC
TO-252-2
PIN 1
PIN 2
Part Number
C3D03065E
CASE
Package
TO-252-2
Marking
C3D03065
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
dV/dt
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
Operating Junction and Storage Temperature
650
650
650
11
5
3
18
13.5
26
23
100
47
20
200
-55 to
+175
V
V
V
A
A
A
A
W
V/ns
˚C
TC=25˚C
TC=135˚C
TC=158˚C
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
TC=25˚C, tP=10 µS, Pulse
TC=25˚C
TC=110˚C
VR=0-650V
Fig. 3
Fig. 4
1 C3D03065E Rev. A, 04-2016

C3D03065E
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5 1.7
1.8 2.4
5 24
9.5 96
7.6
166
14
11
V
IF = 3 A TJ=25°C
IF = 3 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 3A
nC di/dt = 500 A/μS
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
1.1
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.2
Unit
°C/W
Note
Fig. 8
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
10
TJ = -55 °C
8 TJ = 25 °C
TJ = 75 °C
6 TJ = 125 °C
TJ = 175 °C
4
2
10
8
TJ = 175 °C
6
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
4 TJ = -55 °C
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FowarVd FVo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
0
0 200 400 600 800
ReversVe VRo(ltVag)e, VR (V)
Figure 2. Reverse Characteristics
1000
2 C3D03065E Rev. A, 04-2016




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