CDBD2SC21200-G Datasheet





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CDBD2SC21200-G Datasheet - Silicon Carbide Power Schottky Diode

CDBD2SC21200-G   CDBD2SC21200-G  

Datasheet: CDBD2SC21200-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB D2SC21200-G Reverse Voltage: 1200V Forw ard Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Short recov ery time - High speed switching possibl e - High frequency operation. - High te mperature operation. - Temperature inde pendent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(3) C(1) A(2) TO-263/D2PAK 0 .402(10.20) 0.394(10.00) 3 0.051(1.30 ) 0.043(1.10) 0.596(15.15) 0.585(14.85 ) 0.346(8.80) 0.339(8.60) 12 0.205(5.2 0) 0.197(5.00) 0.049(1.25) 0.045(1.15) 0.037(0.95) 0.033(0.85) 0.063(1.60) 0 .055(1.40) 0.185(4.70) 0.177(4.50) 0.0 54(1.37) 0.046(1.17) 0.107(2.72) 0.091( 2.32) 0.019(0.47) 0.014(0.37) Dimen


Manufacture Part Number Description

Comchip

CDBD2SC21200-G

Silicon Carbide Power Schottky Diode




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